The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2020

Filed:

Oct. 27, 2017
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventor:

Jaroslav Hynecek, Allen, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/363 (2011.01); H04N 5/3745 (2011.01);
U.S. Cl.
CPC ...
H04N 5/37452 (2013.01); H04N 5/363 (2013.01);
Abstract

An image sensor may be provided with an array of image sensor pixels formed on a substrate having front and back surfaces. Each pixel may have a photodiode that receives light through the back surface, a floating diffusion node, a charge transfer gate, and first and second reset transistor gates. A source follower transistor may have a gate coupled to the floating diffusion node and a source coupled to an addressing transistor. The pixel may be coupled to a column feedback amplifier through the addressing transistor and a column feedback reset path. The amplifier may provide a kTC-reset noise compensation voltage to the reset transistors for storage on a holding capacitor coupled between the floating diffusion and a drain terminal of the source follower. The floating diffusion may be bounded at the front surface by the transfer gate, the reset gate, and p-type doped regions.


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