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For the Inventor, By the Inventor

Hwaseong-si, South Korea

Hyun-gi Kim

USPTO Granted Patents = 20 

Average Co-Inventor Count = 5.5

ph-index = 5

Forward Citations = 73(Granted Patents)


Company Filing History:

goldMedal20 out of 131,611 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2011-2018

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20 patents (USPTO):Explore Patents
1. 9953985 - Method of manufacturing integrated circuit device (2018-04-24),
2. 9184091 - Semiconductor device and method of forming the same (2015-11-10),
3. 8946077 - Method of manufacturing a semiconductor device (2015-02-03),
4. 8786009 - Substrate structures including buried wiring, semiconductor devices including substrate structures, and method of fabricating the same (2014-07-22),
5. 8623724 - Method of manufacturing a semiconductor device including a capacitor electrically connected to a vertical pillar transistor (2014-01-07),
6. 8409953 - Method of manufacturing a semiconductor device (2013-04-02),
7. 8373214 - Semiconductor devices with buried bit lines and methods of manufacturing semiconductor devices (2013-02-12),
8. 8372715 - Vertical channel transistors and methods for fabricating vertical channel transistors (2013-02-12),
9. 8343831 - Semiconductor device and method of manufacturing the semiconductor device (2013-01-01),
10. 8324673 - Semiconductor memory devices and methods of forming the same (2012-12-04),
11. 8304824 - Semiconductor device comprising buried word lines (2012-11-06),
12. 8294131 - Integrated circuit devices including low-resistivity conductive patterns in recessed regions (2012-10-23),
13. 8283229 - Methods of fabricating vertical channel transistors (2012-10-09),
14. 8274112 - Semiconductor memory device having pillar structures (2012-09-25),
15. 8247856 - Semiconductor device including a capacitor electrically connected to a vertical pillar transistor (2012-08-21),

Title: Innovator Spotlight: Hyun-gi Kim

Introduction: Hyun-gi Kim, a prominent inventor based in Hwaseong-si, South Korea, has made substantial contributions to the field of semiconductor technology. With a remarkable portfolio of 20 patents, Kim has established a reputation for innovation in the manufacturing of integrated circuit devices.

Latest Patents: Hyun-gi Kim's latest patents include innovative methods for manufacturing integrated circuit devices. One of his key inventions outlines a technique involving the formation of multilayered stack structures on a substrate, which includes creating buried conductive layers and a series of contact plugs. This method enhances the efficiency of circuit design, contributing significantly to the advancement of semiconductor technology. Additionally, Kim has developed a patent for a semiconductor device that incorporates first and second dopant regions. This invention improves the connectivity of conductive lines and contact structures, thereby enhancing the overall performance of semiconductor devices.

Career Highlights: Throughout his career at Samsung Electronics Co., Ltd., Hyun-gi Kim has been at the forefront of innovation within the semiconductor industry. His expertise in developing advanced manufacturing methods has led to significant advancements in integrated circuit technology. Kim's work has not only resulted in numerous patents but also has cemented his status as a leading figure in semiconductor research and development.

Collaborations: Hyun-gi Kim has collaborated with talented individuals such as Kang-Uk Kim and Hui-Jung Kim. His collaborations with these colleagues have fostered a creative environment that encourages innovation and leads to impactful advancements in technology.

Conclusion: Hyun-gi Kim's contributions to semiconductor technology through his patents demonstrate his commitment to innovation and excellence. As he continues to work at Samsung Electronics Co., Ltd., his inventions are set to influence the future of integrated circuit manufacturing and pave the way for new advancements in the field.

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