The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 06, 2012

Filed:

Mar. 08, 2010
Applicants:

Hui-jung Kim, Seoul, KR;

Yong-chul OH, Suwon-si, KR;

Hyun-woo Chung, Seoul, KR;

Hyun-gi Kim, Hwaseong-si, KR;

Kang-uk Kim, Seoul, KR;

Inventors:

Hui-Jung Kim, Seoul, KR;

Yong-Chul Oh, Suwon-si, KR;

Hyun-Woo Chung, Seoul, KR;

Hyun-Gi Kim, Hwaseong-si, KR;

Kang-Uk Kim, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes: an isolation layer for defining a plurality of active areas of a substrate, where the isolation layer is disposed on the substrate; a plurality of buried word lines having upper surfaces that are lower than the upper surfaces of the active areas, being surrounded by the active areas, and extending in a first direction parallel to a main surface of the substrate; a gate dielectric film interposed between the buried word lines and the active areas; and a plurality of buried bit lines having upper surfaces that are lower than the upper surfaces of the plurality of buried word lines and extending parallel to the main surface of the substrate in a second direction that differs from the first direction.


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