The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2012
Filed:
Oct. 18, 2010
Applicants:
Kang-uk Kim, Seoul, KR;
Hyun-woo Chung, Seoul, KR;
Yongchul OH, Suwon-si, KR;
Hui-jung Kim, Seongnam-si, KR;
Hyun-gi Kim, Hwaseong-si, KR;
Inventors:
Kang-Uk Kim, Seoul, KR;
Hyun-Woo Chung, Seoul, KR;
Yongchul Oh, Suwon-si, KR;
Hui-Jung Kim, Seongnam-si, KR;
Hyun-Gi Kim, Hwaseong-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/772 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods of fabricating vertical channel transistors may include forming an active region on a substrate, patterning the active region to form vertical channels at sides of the active region, forming a buried bit line in the active region between the vertical channels, and forming a word line facing a side of the vertical channel.