The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2014

Filed:

Oct. 12, 2010
Applicants:

Kang-uk Kim, Seoul, KR;

Yong-chul OH, Paldal-gu, KR;

Hui-jung Kim, Seongnam-si, KR;

Hyun-woo Chung, Seoul, KR;

Hyun-gi Kim, Hwaseong-si, KR;

Inventors:

Kang-Uk Kim, Seoul, KR;

Yong-Chul Oh, Paldal-gu, KR;

Hui-Jung Kim, Seongnam-si, KR;

Hyun-Woo Chung, Seoul, KR;

Hyun-Gi Kim, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a substrate structure including a first substrate and a second substrate, and a buried wiring interposed between the first substrate and the second structure, where the buried wiring is in direct contact with the second substrate. The semiconductor device further includes a vertical transistor located in the second substrate of the substrate structure. The vertical transistor includes a gate electrode and a semiconductor pillar, and the buried wiring is one of source electrode or a drain electrode of the vertical transistor.


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