The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2013
Filed:
Apr. 14, 2010
Jae-man Yoon, Hwaseong-si, KR;
Hui-jung Kim, Seongnam-si, KR;
Hyun-woo Chung, Seoul, KR;
Hyun-gi Kim, Hwaseong-si, KR;
Kang-uk Kim, Seoul, KR;
Yong-chul OH, Suwon-si, KR;
Jae-Man Yoon, Hwaseong-si, KR;
Hui-Jung Kim, Seongnam-si, KR;
Hyun-Woo Chung, Seoul, KR;
Hyun-Gi Kim, Hwaseong-si, KR;
Kang-Uk Kim, Seoul, KR;
Yong-Chul Oh, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A semiconductor device, comprising: a vertical pillar transistor (VPT) formed on a silicon-on-insulator (SOI) substrate, the VPT including a body that has a lower portion and an upper portion, a source/drain node disposed at an upper end portion of the upper portion of the body and a drain/source node disposed at the lower portion of the body; a buried bit line (BBL) formed continuously on sidewalls and an upper surface of the lower portion, the BBL includes metal sificide; and a word line that partially enclosing the upper portion of the body of the VPT, wherein the BBL extends along a first direction and the word line extends in a second direction substantially perpendicular to the first direction. An offset region is disposed immediately beneath the word line.