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Seoul, South Korea

Hyo-Jung Kim

This inventor holds 15 USPTO granted patents and 1 published patent application and 1 EPO patent, primarily in Semiconductor Manufacturing. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2006-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyo-Jung Kim. Retrieved from https://idiyas.com/inventor/hyo-jung-kim-b26ve5jo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 15 

% Patents Active = 80.0

 

Average Co-Inventor Count = 5.6

ph-index = 5

Forward Citations = 60(Granted Patents)


Location History:

  • Busan-si, KR (2006)
  • Gwacheon-si, KR (2006 - 2014)
  • Seoul, KR (2014 - 2016)
  • Gumi-si, KR (2019)
  • Hwaseong-si, KR (2014 - 2023)

Company Filing History:

goldMedal15 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2006-2023

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Areas of Expertise:
Semiconductor Devices
Nonvolatile Memory
Fine Pattern Formation
Three-Dimensional Devices
Storage Electrode
Etch Stop Layer
Variable Resistance Memory
Integrated Circuit
Gap-Fill Layers
Mold Structure
Fabrication Methods
Image Editing
15 patents (USPTO):Explore Patents
1. 11640922 - Gap-fill layers, methods of forming the same, and semiconductor devices manufactured by the methods of forming the same (2023-05-02),
2. 11257708 - Gap-fill layers, methods of forming the same, and semiconductor devices manufactured by the methods of forming the same (2022-02-22),
3. 10334173 - Electronic device and method for editing image in electronic device (2019-06-25),
4. 10250857 - Electronic device and method (2019-04-02),
5. 10096618 - Methods of fabricating three-dimensional semiconductor devices (2018-10-09),
6. 9502332 - Nonvolatile memory device and a method for fabricating the same (2016-11-22),
7. 8912592 - Non-volatile memory device including etch stop layer pattern (2014-12-16),
8. 8877634 - Methods of forming a fine pattern on a substrate and methods of forming a semiconductor device having a fine pattern (2014-11-04),
9. 8822287 - Methods of manufacturing semiconductor devices (2014-09-02),
10. 8735215 - Method of manufacturing variable resistance memory device (2014-05-27),
11. 8664101 - Multiple mold structure methods of manufacturing vertical memory devices (2014-03-04),
12. 8633104 - Methods of manufacturing three-dimensional semiconductor devices (2014-01-21),
13. 7238585 - Method of forming a storage electrode of a semiconductor device (2007-07-03),
14. 7119392 - Storage electrode of a semiconductor device and method of forming the same (2006-10-10),
15. 7005389 - Methods for forming a thin film on an integrated circuit device by sequentially providing energies to activate the reactants (2006-02-28),

Title: Hyo-Jung Kim: Innovator in Semiconductor Technology

Introduction

Hyo-Jung Kim is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 15 patents. His work focuses on advanced materials and methods that enhance the performance and efficiency of semiconductor devices.

Latest Patents

One of Hyo-Jung Kim's latest patents involves gap-fill layers, methods of forming the same, and semiconductor devices manufactured by these methods. This innovative device includes a gap-fill layer that consists of a multi-layered structure designed to fill a trench extending from the upper layer to the lower layer. The gap-filling layer comprises a first dielectric layer that fills a portion of the trench, a second dielectric layer that is more recessed toward the lower layer, and a third dielectric layer that covers the second layer. This design aims to improve the reliability and functionality of semiconductor devices.

Career Highlights

Hyo-Jung Kim is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of semiconductor technology. His expertise and innovative approach have positioned him as a key player in the industry, contributing to the advancement of electronic devices.

Collaborations

Hyo-Jung Kim collaborates with talented individuals such as Jong-Heun Lim and Kyung-Hyun Kim, who bring diverse skills and perspectives to their projects. Their teamwork fosters an environment of creativity and innovation, leading to groundbreaking developments in semiconductor technology.

Conclusion

Hyo-Jung Kim's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence the future of electronic devices and materials.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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