IDiyas

For the Inventor, By the Inventor

Seoul, South Korea

Hyo-Jung Kim

USPTO Granted Patents = 15 

 

Average Co-Inventor Count = 5.6

ph-index = 5

Forward Citations = 59(Granted Patents)


Location History:

  • Busan-si, KR (2006)
  • Gwacheon-si, KR (2006 - 2014)
  • Seoul, KR (2014 - 2016)
  • Gumi-si, KR (2019)
  • Hwaseong-si, KR (2014 - 2023)

Company Filing History:

goldMedal15 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2006-2023

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15 patents (USPTO):Explore Patents
1. 11640922 - Gap-fill layers, methods of forming the same, and semiconductor devices manufactured by the methods of forming the same (2023-05-02),
2. 11257708 - Gap-fill layers, methods of forming the same, and semiconductor devices manufactured by the methods of forming the same (2022-02-22),
3. 10334173 - Electronic device and method for editing image in electronic device (2019-06-25),
4. 10250857 - Electronic device and method (2019-04-02),
5. 10096618 - Methods of fabricating three-dimensional semiconductor devices (2018-10-09),
6. 9502332 - Nonvolatile memory device and a method for fabricating the same (2016-11-22),
7. 8912592 - Non-volatile memory device including etch stop layer pattern (2014-12-16),
8. 8877634 - Methods of forming a fine pattern on a substrate and methods of forming a semiconductor device having a fine pattern (2014-11-04),
9. 8822287 - Methods of manufacturing semiconductor devices (2014-09-02),
10. 8735215 - Method of manufacturing variable resistance memory device (2014-05-27),
11. 8664101 - Multiple mold structure methods of manufacturing vertical memory devices (2014-03-04),
12. 8633104 - Methods of manufacturing three-dimensional semiconductor devices (2014-01-21),
13. 7238585 - Method of forming a storage electrode of a semiconductor device (2007-07-03),
14. 7119392 - Storage electrode of a semiconductor device and method of forming the same (2006-10-10),
15. 7005389 - Methods for forming a thin film on an integrated circuit device by sequentially providing energies to activate the reactants (2006-02-28),
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