The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2016

Filed:

Jun. 26, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Jong-Heun Lim, Gyeonggi-do, KR;

Hyo-Jung Kim, Seoul, KR;

Ji-Woon Im, Gyeonggi-do, KR;

Kyung-Hyun Kim, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 23/48 (2013.01); H01L 27/11575 (2013.01); H01L 27/11582 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A nonvolatile memory device including a substrate which includes a cell array region and a connection region, an electrode structure formed on the cell array region and the connection region and including a plurality of laminated electrodes, a first recess formed in the electrode structure on the connection region and disposed between the cell array region and a second recess formed in the electrode structure on the connection region, and a plurality of vertical wirings formed on the plurality of electrodes exposed by the first recess.


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