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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8877634 B1

PDFFull Text
Expired
Date of Patent:
Nov. 04, 2014

Filed:

Dec. 19, 2012

Methods of forming a fine pattern on a substrate and methods of forming a semiconductor device having a fine pattern

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Dong-Woon Shin, Seongnam-si, KR;

Bong-Hyun Kim, Incheon, KR;

Su-Min Kim, Suwon-si, KR;

Hyo-Jung Kim, Gwacheon-si, KR;

Chang-Min Park, Hwaseong-si, KR;

Soo-Jin Hong, Guri-si, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Myers Bigel Sibley & Sajovec, PA

Primary Examiner:

Thanhha Pham

Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/768 (2006.01); H01L 21/308 (2006.01); H01L 21/033 (2006.01); H01L 27/108 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/308 (2013.01); H01L 21/76802 (2013.01); H01L 21/0337 (2013.01); H01L 27/10885 (2013.01); H01L 21/31144 (2013.01); H01L 27/10888 (2013.01); H01L 27/10855 (2013.01);
Abstract

The inventive concept provides methods of manufacturing semiconductor devices having a fine pattern. In some embodiments, the methods comprise forming an etch-target film on a substrate, forming a first mask pattern on the etch-target film, forming a second mask pattern by performing an ion implantation process in the first mask pattern, and etching the etch-target film using the second mask pattern.

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Shin, Dong-Woon. (2014). Methods of forming a fine pattern on a substrate and methods of forming a semiconductor device having a fine pattern (U.S. Patent No. 8877634). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8877634

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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