logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11257708 B1

PDFFull Text
Date of Patent:
Feb. 22, 2022

Filed:

Apr. 08, 2019

Gap-fill layers, methods of forming the same, and semiconductor devices manufactured by the methods of forming the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Miso Shin, Seoul, KR;

Chungki Min, Hwaseong-si, KR;

Gihwan Kim, Suwon-si, KR;

Sanghyeok Kim, Seoul, KR;

Hyo-Jung Kim, Hwaseong-si, KR;

Geunwon Lim, Yongin-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Shahed Ahmed

Assistant Examiner:

Khatib A Rahman

Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 21/3105 (2006.01); H01L 27/11573 (2017.01); H01L 21/324 (2006.01); H01L 27/11582 (2017.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/31055 (2013.01); H01L 21/31111 (2013.01); H01L 21/324 (2013.01); H01L 21/76837 (2013.01); H01L 27/11573 (2013.01); H01L 27/11582 (2013.01);
Abstract

A device including a gap-fill layer may include an upper layer that on a lower layer that defines a trench that extends from a top surface of the upper layer and towards the lower layer, and the gap filling layer may be a multi-layered structure filling the trench. The gap-filling layer may include a first dielectric layer that fills a first portion of the trench and has a top surface proximate to the top surface of the upper layer, a second dielectric layer that fills a second portion of the trench and has a top surface proximate to the top surface of the upper layer and more recessed toward the lower layer than the top surface of the first dielectric layer, and a third dielectric layer that fills a remaining portion of the trench and covers the top surface of the second dielectric layer.

Find Patent Forward Citations

Loading…