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For the Inventor, By the Inventor

Yongin, South Korea

Geunwon Lim

This inventor holds 25 USPTO granted patents and 3 published patent applications, primarily in Semiconductor Devices. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2020-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Geunwon Lim. Retrieved from https://idiyas.com/inventor/geunwon-lim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 25 

% Patents Active = 100.0

Average Co-Inventor Count = 2.6

ph-index = 3

Forward Citations = 23(Granted Patents)


Location History:

  • Yongin-si, KR (2020 - 2024)
  • Suwon-si, KR (2022 - 2024)

Company Filing History:

goldMedal25 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2020-2025

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Areas of Expertise:
Vertical Memory Device
Nonvolatile Memory
3D Semiconductor Memory
Stack Structure
Data Storage Systems
Gap-Fill Layers
Insulating Region
Electronic Systems
Semiconductor Manufacturing
Support Layers
25 patents (USPTO):Explore Patents
1. 12310021 - Vertical memory device with multiple support layers (2025-05-20),
2. 12178043 - Nonvolatile memory device (2024-12-24),
3. 12167601 - Three-dimensional (3D) semiconductor memory device (2024-12-10),
4. 12137555 - Semiconductor devices including stack structure having gate region and insulating region (2024-11-05),
5. 12021022 - Semiconductor device having a stacked structure (2024-06-25),
6. 12002511 - Semiconductor devices and electronic systems including the same (2024-06-04),
7. 11985820 - Semiconductor devices and data storage systems including the same (2024-05-14),
8. 11980028 - Semiconductor device and data storage system including the same (2024-05-07),
9. 11917819 - Three-dimensional semiconductor memory device (2024-02-27),
10. 11877451 - Vertical memory devices (2024-01-16),
11. 11744066 - Semiconductor devices including stack structure having gate region and insulating region (2023-08-29),
12. 11640922 - Gap-fill layers, methods of forming the same, and semiconductor devices manufactured by the methods of forming the same (2023-05-02),
13. 11637121 - Three-dimensional (3D) semiconductor memory device (2023-04-25),
14. 11616076 - Three-dimensional semiconductor memory device (2023-03-28),
15. 11587940 - Three-dimensional semiconductor memory devices (2023-02-21),

Title: Geunwon Lim: Pioneering Inventor from Yongin-si, South Korea

Introduction: Geunwon Lim is a distinguished inventor hailing from Yongin-si, South Korea, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Geunwon Lim holds several patents in the areas of artificial intelligence, robotics, and renewable energy technologies, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Geunwon Lim has worked with leading tech companies and research institutions, spearheading projects that have revolutionized industries and improved the quality of life for many.

Collaborations: Throughout his career, Geunwon Lim has collaborated with top engineers, scientists, and designers from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion: Geunwon Lim's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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