The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 2023

Filed:

Mar. 30, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Geunwon Lim, Yongin-si, KR;

SangJun Hong, Hwaseong-si, KR;

Seokcheon Baek, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 27/11524 (2017.01); H01L 27/11582 (2017.01); H01L 27/11565 (2017.01); H01L 27/1157 (2017.01); H01L 27/11573 (2017.01); H01L 29/423 (2006.01); H01L 21/28 (2006.01); H01L 27/11519 (2017.01); H01L 27/11526 (2017.01); H01L 27/11556 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 23/5226 (2013.01); H01L 27/1157 (2013.01); H01L 27/11565 (2013.01); H01L 27/11573 (2013.01); H01L 29/40117 (2019.08); H01L 29/42344 (2013.01); H01L 27/11519 (2013.01); H01L 27/11524 (2013.01); H01L 27/11526 (2013.01); H01L 27/11556 (2013.01); H01L 29/42328 (2013.01);
Abstract

A three-dimensional semiconductor memory device includes a substrate, an electrode structure including gate electrodes sequentially stacked on the substrate, a source structure between the electrode structure and the substrate, vertical semiconductor patterns passing through the electrode structure and the source structure, a data storage pattern between each of the vertical semiconductor patterns and the electrode structure, and a common source pattern between the source structure and the substrate. The common source pattern has a lower resistivity than the source structure and is connected to the vertical semiconductor patterns through the source structure.


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