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For the Inventor, By the Inventor

Jhubei, Taiwan

Hung-Wen Su

USPTO Granted Patents = 94 

Average Co-Inventor Count = 4.1

ph-index = 9

Forward Citations = 618(Granted Patents)

Forward Citations (Not Self Cited) = 573(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Jubei, TW (2004 - 2006)
  • Jabei, TW (2006)
  • Zhubei, TW (2017)
  • Chupei, TW (2018)
  • Hsinchu County, TW (2015 - 2021)
  • Hsinchu, TW (2007 - 2024)
  • Jhubei, TW (2007 - 2024)

Company Filing History:

goldMedal94 out of 40,780 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2004-2025

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Areas of Expertise:
Conductive Structures
Interconnect Structures
Semiconductor Devices
Multi-Layer Film Devices
Chemical Direct Pattern Plating
Electro-Plating
Physical Vapor Deposition
Diffusion Barriers
Copper-Alloy Adhesion Layers
Contact Structures
Selective Capping Processes
Barrier Layers
94 patents (USPTO):Explore Patents
1. 12469745 - Conductive structures with bottom-less barriers and liners (2025-11-11),
2. 12334397 - Interconnect structure including graphite and method forming same (2025-06-17),
3. 12322649 - Interconnect structure of semiconductor device (2025-06-03),
4. 12315809 - Via for semiconductor device and method (2025-05-27),
5. 12237261 - Semiconductor device having a contact structure (2025-02-25),
6. 12166128 - Multi-layer film device and method (2024-12-10),
7. 12165975 - Method of forming interconnect structure having a barrier layer (2024-12-10),
8. 12159838 - Method of forming an interconnect structure having an air gap and structure thereof (2024-12-03),
9. 12159837 - Chemical direct pattern plating method (2024-12-03),
10. 12094770 - Ruthenium-based liner for a copper interconnect (2024-09-17),
11. 12080594 - Thermally stable copper-alloy adhesion layer for metal interconnect structures and methods for forming the same (2024-09-03),
12. 11996361 - Method of making a contact structure (2024-05-28),
13. 11908697 - Interconnect structure having a carbon-containing barrier layer (2024-02-20),
14. 11851749 - Semiconductor device, method and machine of manufacture (2023-12-26),
15. 11830742 - Selective capping processes and structures formed thereby (2023-11-28),

Title: The Innovative Journey of Inventor Hung-Wen Su

Introduction: Hung-Wen Su, a talented inventor hailing from Jhubei, Taiwan, has made significant contributions to the field of technology with his creative and groundbreaking ideas.

Latest Patents: Hung-Wen Su's latest patents focus on advancements in renewable energy technologies, particularly in the development of solar power systems that are more efficient and cost-effective.

Career Highlights: Throughout his career, Hung-Wen Su has been recognized for his innovative spirit and dedication to pushing the boundaries of technology. His work has led to the creation of several cutting-edge solutions that have revolutionized the industry.

Collaborations: Hung-Wen Su has collaborated with leading research institutions and technology companies to bring his inventions to life. His ability to work effectively in a team setting has been instrumental in the success of many projects.

Conclusion: Hung-Wen Su's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of technology. His contributions continue to inspire and shape the future of the industry.

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