The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Jul. 26, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chia-Pang Kuo, Taoyuan City, TW;
Huan-Yu Shih, Taipei, TW;
Wen-Hsuan Chen, Hsinchu, TW;
Cheng-Lun Tsai, Hsinchu, TW;
Ya-Lien Lee, Baoshan Township, TW;
Cheng-Hui Weng, Hsinchu, TW;
Chun-Chieh Lin, Taichung City, TW;
Hung-Wen Su, Jhubei City, TW;
Yao-Min Liu, Taipei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method includes forming an insulating layer over a conductive feature; etching the insulating layer to expose a first surface of the conductive feature; covering the first surface of the conductive feature with a sacrificial material, wherein the sidewalls of the insulating layer are free of the sacrificial material; covering the sidewalls of the insulating layer with a barrier material, wherein the first surface of the conductive feature is free of the barrier material, wherein the barrier material includes tantalum nitride (TaN) doped with a transition metal; removing the sacrificial material; and covering the barrier material and the first surface of the conductive feature with a conductive material.