The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2026
Filed:
May. 08, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Wei-Jen Lo, Hsinchu, TW;
Syun-Ming Jang, Hsinchu, TW;
Ming-Hsing Tsai, Chu-Pei, TW;
Chun-Chieh Lin, Taichung, TW;
Hung-Wen Su, Jhubei, TW;
Ya-Lien Lee, Baoshan Township, TW;
Chih-Han Tseng, Tainan, TW;
Chih-Cheng Kuo, Taipei, TW;
Yi-An Lai, Hsinchu, TW;
Kevin Huang, Hsinchu, TW;
Kuan-Hung Ho, Taichung, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76847 (2013.01); H01L 21/76804 (2013.01); H01L 21/76834 (2013.01); H01L 21/7684 (2013.01); H01L 21/76846 (2013.01); H01L 21/76877 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/0384 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05582 (2013.01);
Abstract
Embodiments provide a method and resulting structure that includes forming an opening in a dielectric layer to expose a metal feature, selectively depositing a metal cap on the metal feature, depositing a barrier layer over the metal cap, and depositing a conductive fill on the barrier layer.