The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Jul. 25, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chia-Pang Kuo, Taoyuan, TW;
Chih-Yi Chang, New Taipei, TW;
Ming-Hsiao Hsieh, Hsinchu, TW;
Wei-Hsiang Chan, Hsinchu, TW;
Ya-Lien Lee, Baoshan Township, TW;
Chien Chung Huang, Taichung, TW;
Chun-Chieh Lin, Taichung, TW;
Hung-Wen Su, Jhubei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A structure includes a first conductive feature in a first dielectric layer; a second dielectric layer over the first dielectric layer; and a second conductive feature extending through the second dielectric layer to physically contact the first conductive feature, wherein the second conductive feature includes a metal adhesion layer over and physically contacting the first conductive feature; a barrier layer extending along sidewalls of the second dielectric layer; and a conductive filling material extending over the metal adhesion layer and the barrier layer, wherein a portion of the conductive filling material extends between the barrier layer and the metal adhesion layer.