Hung-Sen Wang

Title: Innovations of Hung-Sen Wang in High Voltage Devices

Introduction

Hung-Sen Wang is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of high voltage devices. With a total of 11 patents to his name, Wang's work has had a substantial impact on the industry.

Latest Patents

Wang's latest patents include innovative designs for high voltage devices. One of his patents describes a high-voltage device that features a first frame-like isolation and a second frame-like isolation, which are separated from each other. This device also includes a first frame-like gate structure covering the first frame-like isolation and a second frame-like gate structure covering the second frame-like isolation. Additionally, it has a first drain region enclosed by the first frame-like isolation and a second drain region enclosed by the second frame-like isolation. The design incorporates a first frame-like source region surrounding the first frame-like gate structure and a second frame-like source region surrounding the second frame-like gate structure. The first and second drain regions, along with the first and second frame-like source regions, include a first conductivity type, while the first and second doped regions include a second conductivity type that is complementary to the first.

Another patent by Wang outlines a high-voltage device that consists of a substrate and a first well region disposed within the substrate. This design features at least a first isolation and a frame-like gate structure over the first well region, covering a portion of the first isolation. The device also includes a drain region in the first well region, separated from the frame-like gate structure by the first isolation, and a source region that is separated from the drain region by both the first isolation and the frame-like gate structure. Similar to his other patent, the first well region, drain region, and source region include a first conductivity type, while the substrate comprises a second conductivity type that is complementary.

Career Highlights

Hung-Sen Wang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he continues to innovate in the field of semiconductor technology. His work has been instrumental in advancing high voltage device designs, which are crucial for various applications in electronics.

Collaborations

Wang has collaborated with notable colleagues, including Shine Chien Chung and Tao-Wen Chung, contributing to the development of cutting-edge technologies in the semiconductor industry.

Conclusion