The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2012
Filed:
Nov. 13, 2009
Applicants:
Shine Chung, San Jose, CA (US);
Hung-sen Wang, Tainan, TW;
Tao-wen Chung, Zhubei, TW;
Chun-jung Lin, Hsin-Chu, TW;
Yu-jen Wang, Hsin-Chu, TW;
Inventors:
Shine Chung, San Jose, CA (US);
Hung-Sen Wang, Tainan, TW;
Tao-Wen Chung, Zhubei, TW;
Chun-Jung Lin, Hsin-Chu, TW;
Yu-Jen Wang, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of writing a magneto-resistive random access memory (MRAM) cell includes providing a writing pulse to write a value to the MRAM cell; and verifying a status of the MRAM cell immediately after the step of providing the first writing pulse. In the event of a write failure, the value is rewritten into the MRAM cell.