Enter inventor name

Chun-Jung Lin

This inventor holds 34 USPTO granted patents, primarily in Magnetoresistive RAM. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Macronix International Co., Ltd.. Active years: 1999-2020.

USPTO Granted Patents = 34

% Patents Active = 79.4

Average Co-Inventor Count = 3.1

ph-index = 9

Forward Citations = 441(Granted Patents)

Location History:

Hsin-Tien, TW (1999)
Hsin-Chu, TW (2000 - 2020)

Company Filing History:

23 out of 42,759

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

11 out of 3,609

Macronix International Co., Ltd.

patents

Years Active: 1999-2020

Loading Chart...

Areas of Expertise:

MRAM Device

Magnetic Tunnel Junction

Ferroelectric Transistors

Resistance States

Programming Currents

Spin Torque Transfer

Non-Volatile Memory

Test Apparatus

Memory Fabrication

Contactless Communications

Memory Cell Structure

Optical Proximity Corrections

34 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10665321 - Method for testing MRAM device and test apparatus thereof (2020-05-26),

2. 9852785 - Memories with metal-ferroelectric-semiconductor (MFS) transistors (2017-12-26),

3. 9767878 - Semiconductor memory device and method for controlling the same (2017-09-19),

4. 9412721 - Contactless communications using ferromagnetic material (2016-08-09),

5. 9379316 - Method of fabricating a magnetoresistive random access structure (2016-06-28),

6. 8964458 - Differential MRAM structure with relatively reversed magnetic tunnel junction elements enabling writing using same polarity current (2015-02-24),

7. 8902641 - Adjusting reference resistances in determining MRAM resistance states (2014-12-02),

8. 8879308 - Raising programming currents of magnetic tunnel junctions using word line overdrive and high-k metal gate (2014-11-04),

9. 8878318 - Structure and method for a MRAM device with an oxygen absorbing cap layer (2014-11-04),

10. 8760255 - Contactless communications using ferromagnetic material (2014-06-24),

11. 8750031 - Test structures, methods of manufacturing thereof, test methods, and MRAM arrays (2014-06-10),

12. 8687412 - Reference cell configuration for sensing resistance states of MRAM bit cells (2014-04-01),

13. 8648401 - Domain wall assisted spin torque transfer magnetresistive random access memory structure (2014-02-11),

14. 8629518 - Sacrifice layer structure and method for magnetic tunnel junction (MTJ) etching process (2014-01-14),

15. 8493776 - MRAM with current-based self-referenced read operations (2013-07-23),

Title: The Innovative Journey of Chun-Jung Lin

Introduction: Chun-Jung Lin, a pioneering inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Chun-Jung Lin's latest patents focus on advancements in semiconductor technology, particularly in the development of cutting-edge microchips for various electronic devices.

Career Highlights: With a career spanning over two decades, Chun-Jung Lin has held key roles in leading tech companies, where he spearheaded research and development projects that have resulted in numerous patented inventions.

Collaborations: Throughout his career, Chun-Jung Lin has collaborated with top researchers, engineers, and scientists in the industry, fostering a culture of innovation and driving forward-thinking solutions to complex technological challenges.

Conclusion: Chun-Jung Lin's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his reputation as a visionary inventor in the ever-evolving tech landscape.

Profile summary based on public USPTO records.

Please report any incorrect information to [email protected]