The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Dec. 16, 2011
Applicants:
Ya-chen Kao, Fuxing Township, TW;
Tien-wei Chiang, Taipei, TW;
Chun-jung Lin, Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/14 (2006.01); H01L 23/58 (2006.01); G11C 29/00 (2006.01); H01L 21/66 (2006.01); G11C 11/16 (2006.01); H01L 23/544 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
G11C 11/14 (2013.01); G11C 11/16 (2013.01); G11C 29/00 (2013.01); H01L 22/30 (2013.01); H01L 23/544 (2013.01); H01L 43/12 (2013.01); H01L 23/58 (2013.01);
Abstract
Test structures, methods of manufacturing thereof, test methods, and magnetic random access memory (MRAM) arrays are disclosed. In one embodiment, a test structure is disclosed. The test structure includes an MRAM cell having a magnetic tunnel junction (MTJ) and a transistor coupled to the MTJ. The test structure includes a test node coupled between the MTJ and the transistor, and a contact pad coupled to the test node.