The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Sep. 24, 2011
Chih-ming Chen, Hsinchu, TW;
Ya-chen Kao, Taoyuan County, TW;
Ming-te Liu, Taipei, TW;
Chung-yi Yu, Hsin-Chu, TW;
Cheng-yuan Tsai, Chu-Pei, TW;
Chun-jung Lin, HsinChu, TW;
Chih-Ming Chen, Hsinchu, TW;
Ya-Chen Kao, Taoyuan County, TW;
Ming-Te Liu, Taipei, TW;
Chung-Yi Yu, Hsin-Chu, TW;
Cheng-Yuan Tsai, Chu-Pei, TW;
Chun-Jung Lin, HsinChu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
MTJ stack structures for an MRAM device include an MTJ stack having a pinned ferromagnetic layer over a pinning layer, a tunneling barrier layer over the pinned ferromagnetic layer, a free ferromagnetic layer over the tunneling barrier layer, a conductive oxide layer over the free ferromagnetic layer, and an oxygen-based cap layer over the conductive oxide layer.