The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2022
Filed:
Jun. 19, 2020
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Hung-Sen Wang, Tainan, TW;
Yun-Ta Tsai, Hsinchu, TW;
Ruey-Hsin Liu, Hsinchu, TW;
Shih-Fen Huang, Hsinchu County, TW;
Ho-Chun Liou, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A high-voltage device includes a substrate, a first well region disposed in the substrate, at least a first isolation, a frame-like gate structure over the first well region and covering a portion of the first isolation, a drain region in the first well region and separated from the frame-like gate structure by the first isolation, and a source region separated from the drain region by the first isolation and the frame-like gate structure. The first well region, the drain region and the source region include a first conductivity type, and the substrate includes a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other.