The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2013

Filed:

Feb. 02, 2012
Applicants:

Shine Chung, San Jose, CA (US);

Hung-sen Wang, Tainan, TW;

Tao-wen Chung, Zhubei, TW;

Chun-jung Lin, Hsin-Chu, TW;

Yu-jen Wang, Hsin-Chu, TW;

Inventors:

Shine Chung, San Jose, CA (US);

Hung-Sen Wang, Tainan, TW;

Tao-Wen Chung, Zhubei, TW;

Chun-Jung Lin, Hsin-Chu, TW;

Yu-Jen Wang, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A circuit includes magneto-resistive random access memory (MRAM) cell and a control circuit. The control circuit is electrically coupled to the MRAM cell, and includes a current source configured to provide a first writing pulse to write a value into the MRAM cell, and a read circuit configured to measure a status of the MRAM cell. The control circuit is further configured to verify whether a successful writing is achieved through the first writing pulse.


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