The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2012
Filed:
Jan. 14, 2010
Applicants:
Shine Chung, San Jose, CA (US);
Tao-wen Chung, Zhubei, TW;
Chun-jung Lin, Hsin-Chu, TW;
Yu-jen Wang, Hsin-Chu, TW;
Hung-sen Wang, Tainan, TW;
Inventors:
Shine Chung, San Jose, CA (US);
Tao-Wen Chung, Zhubei, TW;
Chun-Jung Lin, Hsin-Chu, TW;
Yu-Jen Wang, Hsin-Chu, TW;
Hung-Sen Wang, Tainan, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device; and a selector comprising a source-drain path serially coupled to the MTJ device. The method further includes applying an overdrive voltage to a gate of the selector to turn on the selector.