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For the Inventor, By the Inventor

Taichung, Taiwan

Hung-Kai Chen

USPTO Granted Patents = 14

Average Co-Inventor Count = 4.8

ph-index = 3

Forward Citations = 49(Granted Patents)


Company Filing History:

goldMedal14 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2015-2025

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14 patents (USPTO):Explore Patents
1. 12374542 - Cut metal gate process for reducing transistor spacing (2025-07-29),
2. 12156394 - SRAM structure and method for forming the same (2024-11-26),
3. 11948842 - Etch stop layer between substrate and isolation structure (2024-04-02),
4. 11721544 - Cut metal gate process for reducing transistor spacing (2023-08-08),
5. 11315933 - SRAM structure and method for forming the same (2022-04-26),
6. 11239072 - Cut metal gate process for reducing transistor spacing (2022-02-01),
7. 10991628 - Etch stop layer between substrate and isolation structure (2021-04-27),
8. 10978351 - Etch stop layer between substrate and isolation structure (2021-04-13),
9. 10651030 - Cut metal gate process for reducing transistor spacing (2020-05-12),
10. 10319581 - Cut metal gate process for reducing transistor spacing (2019-06-11),
11. 9659776 - Doping for FinFET (2017-05-23),
12. 9362404 - Doping for FinFET (2016-06-07),
13. 9224737 - Dual epitaxial process for a finFET device (2015-12-29),
14. 8937353 - Dual epitaxial process for a finFET device (2015-01-20),

Title: Hung-Kai Chen: Pioneering Inventor & Innovator from Taichung

Introduction:

Hung-Kai Chen, a brilliant inventor from Taichung, TW, is renowned for his relentless passion for pushing the boundaries of what is possible in the world of innovation. With an impressive portfolio of 12 patents to his name, Hung-Kai Chen continues to inspire future generations of inventors and innovators worldwide.

Latest Patents:

Hung-Kai Chen's latest patents showcase his ingenuity and expertise in semiconductor technologies. One of his recent inventions includes the "Etch stop layer between substrate and isolation structure," which revolutionizes the device design by incorporating advanced materials and intricate structures to optimize performance. Another groundbreaking patent is the "Cut metal gate process for reducing transistor spacing," which focuses on enhancing the efficiency of semiconductor structures through innovative fabrication techniques.

Career Highlights:

Currently associated with Taiwan Semiconductor Manufacturing Company Limited (TSMC), Hung-Kai Chen has made significant contributions to the semiconductor industry. His innovative approach and problem-solving skills have played a pivotal role in TSMC's success as a leading semiconductor manufacturer in the global market.

Collaborations:

Hung-Kai Chen has collaborated with esteemed colleagues such as Hsien-Chin Lin and Ming-Chang Wen, who share his passion for innovation and technology. Together, they have worked on cutting-edge projects that have set new benchmarks in the semiconductor industry and have garnered recognition for their contributions to the field.

Conclusion:

In conclusion, Hung-Kai Chen's dedication to innovation and his commitment to advancing technology have established him as a trailblazer in the world of inventions. His exceptional talent, coupled with his visionary mindset, continues to shape the future of semiconductor technologies and inspires aspiring inventors and innovators worldwide. Hung-Kai Chen's legacy serves as a testament to the power of creativity and perseverance in driving meaningful progress in the realm of technological innovation.

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