The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Feb. 21, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Hung-Kai Chen, Taichung, TW;
Tsung-Hung Lee, Hsin-Chu, TW;
Han-Pin Chung, Fongshan, TW;
Shih-Syuan Huang, Taichung, TW;
Chun-Fu Cheng, Zhubei, TW;
Chien-Tai Chan, Hsin-Chu, TW;
Kuang-Yuan Hsu, Taichung, TW;
Hsien-Chin Lin, Hsin-Chu, TW;
Ka-Hing Fung, Zhudong Township, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
First and second fins are formed extending from a substrate. A first layer is formed over the first fin. The first layer comprises a first dopant. A portion of the first layer is removed from a tip portion of the first fin. A second layer is formed over the second fin. The second layer comprises a second dopant. One of the first and second dopants is a p-type dopant, and the other of the first and second dopants is an n-type dopant. A portion of the second layer is removed from a tip portion of the second fin. A solid phase diffusion process is performed to diffuse the first dopant into a non-tip portion of the first fin, and to diffuse the second dopant into a non-tip portion of the second fin.