Taichung, Taiwan

Shih-Syuan Huang

This inventor holds 18 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Technology. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2015-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shih-Syuan Huang. Retrieved from https://idiyas.com/inventor/shih-syuan-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 18 

% Patents Active = 77.8

Average Co-Inventor Count = 5.2

ph-index = 4

Forward Citations = 43(Granted Patents)


Company Filing History:


Years Active: 2015-2025

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Areas of Expertise:
Semiconductor Structure
Multi-Gate Device
Epitaxial Channel
Doping
FinFET
Transistor Performance
Counter-Halo Implant
Dislocation Stress Memorization
Process Design
Extended Contact Structure
Nanostructure
18 patents (USPTO):Explore Patents

Title: Innovations by Inventor Shih-Syuan Huang

Introduction: Shih-Syuan Huang is a prominent inventor based in Taichung, Taiwan, recognized for his significant contributions to the semiconductor industry. With a total of 17 patents to his name, Huang has played a crucial role in advancing semiconductor technology through innovative designs and structures.

Latest Patents: Among his latest inventions are two noteworthy patents that capitalize on novel semiconductor structures. The first patent focuses on a semiconductor structure with nanostructures, which includes a substrate with these nanostructures spaced apart in a specific direction. This invention incorporates a gate structure that wraps around the nanostructures and a semiconductor layer, enhancing the performance and efficiency of semiconductor devices. The second patent addresses a semiconductor structure with an extended contact structure, featuring a substrate and a source/drain structure attached to the nanostructures. This design includes an innovative contact that extends into the source/drain structure, providing better connectivity and functionality in semiconductor applications.

Career Highlights: Shih-Syuan Huang currently works at Taiwan Semiconductor Manufacturing Company Ltd. His tenure at this leading organization underscores his commitment to driving innovation within the semiconductor sector. Huang’s work significantly contributes to the company's reputation as a frontrunner in semiconductor manufacturing.

Collaborations: Over the course of his career, Huang has collaborated with several notable professionals, including Tsung-Hsing Yu and Ken-Ichi Goto. These collaborations have allowed for the exchange of ideas and have contributed to the development of cutting-edge semiconductor technologies.

Conclusion: Shih-Syuan Huang’s contributions to the field of semiconductor technology illustrate the importance of innovative thinking and collaboration in advancing modern electronics. His patents reflect a deep understanding of material science and engineering, propelling the industry forward and showcasing his role as a leading inventor in Taiwan.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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