The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2022
Filed:
May. 07, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Ta-Chun Lin, Hsinchu, TW;
Kuo-Hua Pan, Hsinchu, TW;
Jhon-Jhy Liaw, Zhudong Township, Hsinchu County, TW;
Chao-Ching Cheng, Hsinchu, TW;
Hung-Li Chiang, Taipei, TW;
Shih-Syuan Huang, Taichung, TW;
Tzu-Chiang Chen, Hsinchu, TW;
I-Sheng Chen, Taipei, TW;
Sai-Hooi Yeong, Zhubei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
Methods for forming semiconductor structures are provided. The method includes alternately stacking first semiconductor layers and second semiconductor layers over a substrate and patterning the first semiconductor layers and the second semiconductor layers to form a first fin structure. The method further includes forming a first trench in the first fin structure and forming a first source/drain structure in the first trench. The method further includes partially removing the first source/drain structure to form a second trench in the first source/drain structure and forming a first contact in the second trench.