logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11923413 B1

PDFFull Text
Date of Patent:
Mar. 05, 2024

Filed:

Feb. 07, 2022

Semiconductor structure with extended contact structure

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Ta-Chun Lin, Hsinchu, TW;

Kuo-Hua Pan, Hsinchu, TW;

Jhon-Jhy Liaw, Zhudong Township, Hsinchu County, TW;

Chao-Ching Cheng, Hsinchu, TW;

Hung-Li Chiang, Taipei, TW;

Shih-Syuan Huang, Taichung, TW;

Tzu-Chiang Chen, Hsinchu, TW;

I-Sheng Chen, Taipei, TW;

Sai-Hooi Yeong, Zhubei, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Theresa T Doan

Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0673 (2013.01); H01L 21/02603 (2013.01); H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

Semiconductor structures are provided. The semiconductor structure includes a substrate and nanostructures formed over the substrate. The semiconductor structure further includes a gate structure surrounding the nanostructures and a source/drain structure attached to the nanostructures. The semiconductor structure further includes a contact formed over the source/drain structure and extending into the source/drain structure.

Find Patent Forward Citations

Loading…