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For the Inventor, By the Inventor

Hsinchu, Taiwan

Hsien-Chin Lin

USPTO Granted Patents = 29

Average Co-Inventor Count = 4.6

ph-index = 8

Forward Citations = 208(Granted Patents)


Company Filing History:

goldMedal29 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2001-2025

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29 patents (USPTO):Explore Patents
1. 12374542 - Cut metal gate process for reducing transistor spacing (2025-07-29),
2. 11948842 - Etch stop layer between substrate and isolation structure (2024-04-02),
3. 11721544 - Cut metal gate process for reducing transistor spacing (2023-08-08),
4. 11239072 - Cut metal gate process for reducing transistor spacing (2022-02-01),
5. 10991628 - Etch stop layer between substrate and isolation structure (2021-04-27),
6. 10978351 - Etch stop layer between substrate and isolation structure (2021-04-13),
7. 10868003 - Creating devices with multiple threshold voltages by cut-metal-gate process (2020-12-15),
8. 10651030 - Cut metal gate process for reducing transistor spacing (2020-05-12),
9. 10515856 - Method of making a FinFET, and FinFET formed by the method (2019-12-24),
10. 10461078 - Creating devices with multiple threshold voltage by cut-metal-gate process (2019-10-29),
11. 10319581 - Cut metal gate process for reducing transistor spacing (2019-06-11),
12. 10224245 - Method of making a finFET, and finFET formed by the method (2019-03-05),
13. 9659776 - Doping for FinFET (2017-05-23),
14. 9373704 - Multiple-gate semiconductor device and method (2016-06-21),
15. 9362404 - Doping for FinFET (2016-06-07),

Certainly! Here is the article about inventor Hsien-Chin Lin:

Title: Hsien-Chin Lin: Pioneering Innovations in Semiconductor Technology

Introduction:

Inventor Hsien-Chin Lin, hailing from Hsinchu, Taiwan, is a trailblazer in the world of inventors, known for his unwavering passion for innovation and cutting-edge technological advancements. His relentless dedication to pushing the boundaries of technology has cemented his position as a prominent figure in the industry, inspiring future generations of innovators to think outside the box.

Latest Patents:

Hsien-Chin Lin has an impressive portfolio of 28 patents, with his latest groundbreaking inventions including:

1. "Etch stop layer between substrate and isolation structure": a device incorporating advanced semiconductor technologies.

2. "Cut metal gate process for reducing transistor spacing": a semiconductor structure revolutionizing transistor spacing in the industry.

Career Highlights:

Hsien-Chin Lin is currently contributing his expertise to Taiwan Semiconductor Manufacturing Company Ltd. (TSMC), a leading player in the semiconductor manufacturing industry. His innovative solutions and technological contributions have helped propel TSMC to the forefront of semiconductor innovation.

Collaborations:

Throughout his illustrious career, Hsien-Chin Lin has collaborated with esteemed coworkers such as Ming-Chang Wen and Chang-Yun Chang. Together, they have spearheaded numerous projects, driving technological advancements and shaping the future of semiconductor technology.

Conclusion:

Inventor Hsien-Chin Lin's remarkable journey is a testament to his unwavering commitment to innovation and excellence in the field of semiconductor technology. His groundbreaking inventions and collaborative efforts have left an indelible mark on the industry, inspiring a new wave of innovators to push the boundaries of technology further.

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