The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Oct. 25, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Ming-Chang Wen, Kaohsiung, TW;
Chang-Yun Chang, Taipei, TW;
Hsien-Chin Lin, Hsinchu, TW;
Bone-Fong Wu, Hsinchu, TW;
Ya-Hsiu Lin, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes first and second transistors each having a high-k metal gate disposed over a respective channel region of the transistors. The semiconductor device further includes first and second dielectric features in physical contact with an end of the respective high-k metal gates. The first and second transistors are of a same conductivity type. The two high-k metal gates have a same number of material layers. The first transistor's threshold voltage is different from the second transistor's threshold voltage, and at least one of following is true: the two high-k metal gates have different widths, the first and second dielectric features have different distances from respective channel regions of the two transistors, and the first and second dielectric features have different dimensions.