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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10991628 B1

PDFFull Text
Date of Patent:
Apr. 27, 2021

Filed:

Nov. 21, 2019

Etch stop layer between substrate and isolation structure

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Ming-Chang Wen, Kaohsiung, TW;

Chang-Yun Chang, Taipei, TW;

Hsien-Chin Lin, Hsinchu, TW;

Hung-Kai Chen, Taichung, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Davienne N Monbleau

Assistant Examiner:

Scott R Wilson

Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823481 (2013.01); H01L 21/762 (2013.01); H01L 21/76229 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/66545 (2013.01);
Abstract

A device includes a substrate; semiconductor fins extending from the substrate; an isolation structure over the substrate and laterally between the semiconductor fins; a liner layer between sidewalls of the semiconductor fins and the isolation structure; and an etch stop layer between the substrate and the isolation structure and laterally between the semiconductor fins. The etch stop layer includes a material different than that of the isolation structure and the liner layer.

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Wen, Ming-Chang. (2021). Etch stop layer between substrate and isolation structure (U.S. Patent No. 10991628). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10991628

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