The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Nov. 26, 2014
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Hung-Kai Chen, Taichung, TW;
Hsien-Hsin Lin, Hsin-Chu, TW;
Chia-Pin Lin, Xinpu Township, TW;
Chien-Tai Chan, Hsinchu, TW;
Yuan-Ching Peng, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method includes forming a first fin and a second fin extending above a semiconductor substrate, with a shallow trench isolation (STI) region between them. A space is defined between the first and second fins above a top surface of the STI region. A first height is defined between the top surface of the STI region and top surfaces of the first and second fins. A flowable dielectric material is deposited into the space. The dielectric material has a top surface above the top surface of the STI region, so as to define a second height between the top surface of the dielectric material and the top surfaces of the first and second fins. The second height is less than the first height. First and second fin extensions are epitaxially formed above the dielectric, on the first and second fins, respectively, after the depositing step.