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Hui-Hsien Wei

This inventor holds 38 USPTO granted patents and 15 published patent applications, primarily in Memory Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2019-2026.

USPTO Granted Patents = 38 (Patent Applications = 15)

% Patents Active = 100.0

Average Co-Inventor Count = 7.1

ph-index = 4

Forward Citations = 47(Granted Patents)

Location History:

Hsinchu, TW (2021)
Taoyuan, TW (2019 - 2024)

Company Filing History:

38 out of 42,711

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2019-2026

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Areas of Expertise:

Memory Cells

Thin-Film Transistors

Magnetic Random Access Memory

Integrated Circuits

Semiconducting Metal Oxide

Multi-Gate Selectors

Mobility Enhancement

Tri-Gate Transistors

High-Density Memory

Fabrication Methods

38 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12696460 - Memory device including a semiconducting metal oxide FIN transistor and methods of forming the same (2026-07-28),

2. 12660295 - Semiconductor device including thin film transistor and method for forming the same (2026-06-16),

3. 12563742 - Multi-gate selector switches for memory cells and methods of forming the same (2026-02-24),

4. 12507419 - Memory cell device with thin-film transistor selector and methods for forming the same (2025-12-23),

5. 12349368 - Memory device including a semiconducting metal oxide fin transistor and methods of forming the same (2025-07-01),

6. 12336187 - Mobility enhancement by source and drain stress layer or implantation in thin film transistors (2025-06-17),

7. 12317751 - Integrated circuit (2025-05-27),

8. 12315762 - Self-aligned lines and methods for fabricating the same (2025-05-27),

9. 12219880 - Integrated circuit device (2025-02-04),

10. 12219780 - High-density memory device with planar thin film transistor (TFT) selector and methods for making the same (2025-02-04),

11. 12219778 - Multi-gate selector switches for memory cells and methods of forming the same (2025-02-04),

12. 12178051 - Magnetic random access memory and manufacturing method thereof (2024-12-24),

13. 12127489 - Integrated circuit structure (2024-10-22),

14. 12125921 - Semiconducting metal oxide transistors having a patterned gate and methods for forming the same (2024-10-22),

15. 12114511 - Semiconductor device, integrated circuit and method of manufacturing the same (2024-10-08),

Title: The Innovative Journey of Hui-Hsien Wei

Introduction: Hui-Hsien Wei, a talented inventor hailing from Taoyuan, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: Wei's latest patents showcase his commitment to innovation, with a focus on developing cutting-edge solutions in the realm of electronics and renewable energy.

Career Highlights: Throughout his illustrious career, Hui-Hsien Wei has consistently pushed the boundaries of what is possible, earning a reputation as a visionary in the world of invention. His keen eye for detail and passion for creating have led to the development of numerous groundbreaking technologies.

Collaborations: Wei has collaborated with leading research institutions and tech companies to bring his inventions to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of many projects.

Conclusion: In conclusion, Hui-Hsien Wei's inventive spirit and dedication to technological advancement have cemented his legacy as a pioneering inventor. His work continues to inspire future generations to push the limits of innovation and create a better tomorrow.

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