The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2024
Filed:
Feb. 17, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Tai-Yen Peng, Hsinchu, TW;
Hui-Hsien Wei, Taoyuan, TW;
Wei-Chih Wen, Hsinchu County, TW;
Pin-Ren Dai, Hsinchu County, TW;
Chien-Min Lee, Hsinchu County, TW;
Han-Ting Tsai, Kaohsiung, TW;
Jyu-Horng Shieh, Hsinchu, TW;
Chung-Te Lin, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
An IC structure comprises a substrate, a first dielectric structure, a second dielectric structure, a first via structure, and a memory cell structure. The substrate comprises a memory region and a logic region. The first dielectric structure is over the memory region. The second dielectric structure laterally extends from the first dielectric structure to over the logic region. The second dielectric structure has a thickness less than a thickness of the first dielectric structure. The first via structure extends through the first dielectric structure. A top segment of the first via structure is higher than a top surface of the first dielectric structure. The first memory cell structure is over the first via structure.