The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Mar. 04, 2024
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Tai-Yen Peng, Hsinchu, TW;
Hui-Hsien Wei, Taoyuan, TW;
Wei-Chih Wen, Hsinchu County, TW;
Pin-Ren Dai, Hsinchu County, TW;
Chien-Min Lee, Hsinchu County, TW;
Sheng-Chih Lai, Hsinchu County, TW;
Han-Ting Tsai, Kaohsiung, TW;
Chung-Te Lin, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A memory device includes a bottom electrode contact, a magnetic tunnel junction pattern, a protection insulating layer, a first capping layer, an interlayer insulating layer, and a second capping layer. The magnetic tunnel junction pattern is over the bottom electrode contact. The protection insulating layer surrounds the magnetic tunnel junction pattern. The first capping layer surrounds the protection insulating layer. The interlayer insulating layer surrounds the first capping layer. The second capping layer is over the first capping layer and the interlayer insulating layer.