The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Jan. 12, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Yen-Chung Ho, Hsinchu, TW;

Yong-Jie Wu, Tainan City, TW;

Hui-Hsien Wei, Taoyuan City, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 84/03 (2025.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 84/01 (2026.01);
U.S. Cl.
CPC ...
H10D 84/038 (2025.01); H10D 30/031 (2025.01); H10D 30/6755 (2025.01); H10D 84/013 (2025.01); H10D 84/0149 (2025.01);
Abstract

The present disclosure provides a method of forming a semiconductor device. The method includes: forming an interconnect structure over a substrate; forming a first gate structure and a second gate structure in a first layer of the interconnect structure; forming a first metal oxide layer and a second metal oxide layer in a second layer of the interconnect structure over the first gate structure and the second gate structure, respectively; forming an implant mask over the first metal oxide layer and the second metal oxide layer, the implant mask having different thicknesses corresponding to the first metal oxide layer and the second oxide layer; and performing an implantation operation on the first metal oxide layer and the second metal oxide layer.


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