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For the Inventor, By the Inventor

Hsinchu, Taiwan

Yong-Jie Wu

This inventor holds 21 USPTO granted patents and 15 published patent applications, primarily in Semiconductor Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2022-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yong-Jie Wu. Retrieved from https://idiyas.com/inventor/yong-jie-wu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 21 

% Patents Active = 100.0

Average Co-Inventor Count = 5.9

ph-index = 2

Forward Citations = 10(Granted Patents)


Location History:

  • Hsinchu, TW (2022 - 2024)
  • Tainan, TW (2024)

Company Filing History:

goldMedal21 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2022-2026

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Areas of Expertise:
Semiconducting Metal Oxide
Thin Film Transistor
Memory Device
Multi-Gate Selector
High-Density Memory
Mobility Enhancement
Vertical Transistor
Integrated Circuit
Back Channel FET
Tri-Gate Transistor
Fabrication Methods
Selector Transistor
21 patents (USPTO):Explore Patents
1. 12696460 - Memory device including a semiconducting metal oxide FIN transistor and methods of forming the same (2026-07-28),
2. 12660295 - Semiconductor device including thin film transistor and method for forming the same (2026-06-16),
3. 12563742 - Multi-gate selector switches for memory cells and methods of forming the same (2026-02-24),
4. 12507419 - Memory cell device with thin-film transistor selector and methods for forming the same (2025-12-23),
5. 12349368 - Memory device including a semiconducting metal oxide fin transistor and methods of forming the same (2025-07-01),
6. 12336187 - Mobility enhancement by source and drain stress layer or implantation in thin film transistors (2025-06-17),
7. 12315762 - Self-aligned lines and methods for fabricating the same (2025-05-27),
8. 12219780 - High-density memory device with planar thin film transistor (TFT) selector and methods for making the same (2025-02-04),
9. 12219778 - Multi-gate selector switches for memory cells and methods of forming the same (2025-02-04),
10. 12125921 - Semiconducting metal oxide transistors having a patterned gate and methods for forming the same (2024-10-22),
11. 12114511 - Semiconductor device, integrated circuit and method of manufacturing the same (2024-10-08),
12. 12075633 - Vertical metal oxide semiconductor channel selector transistor and methods of forming the same (2024-08-27),
13. 12074219 - Back channel field effect transistors using a pull back process and methods for forming the same (2024-08-27),
14. 12058873 - Memory device including a semiconducting metal oxide fin transistor and methods of forming the same (2024-08-06),
15. 11968840 - Tri-gate transistor and methods for forming the same (2024-04-23),

Title: The Innovative Journey of Inventor Yong-Jie Wu

Introduction: Yong-Jie Wu, a talented inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Yong-Jie Wu holds several patents in the areas of semiconductor technology, renewable energy, and artificial intelligence, showcasing his diverse range of expertise and creativity.

Career Highlights: With a career spanning over two decades, Yong-Jie Wu has worked with leading tech companies and research institutions, playing a key role in developing cutting-edge technologies that have revolutionized the industry.

Collaborations: Throughout his career, Yong-Jie Wu has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge sharing that has led to remarkable advancements in various fields.

Conclusion: Yong-Jie Wu's passion for innovation, coupled with his relentless pursuit of excellence, has established him as a visionary inventor whose work continues to inspire and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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