The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2024
Filed:
May. 16, 2023
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Yong-Jie Wu, Tainan, TW;
Yen-Chung Ho, Hsinchu, TW;
Mauricio Manfrini, Hsinchu, TW;
Chung-Te Lin, Taiwan, TW;
Pin-Cheng Hsu, Pin-Cheng Hsu, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
A device structure includes at least one selector device. Each selector device includes a vertical stack including, from bottom to top, a bottom electrode, a metal oxide semiconductor channel layer, and a top electrode and located over a substrate, a gate dielectric layer contacting sidewalls of the bottom electrode, the metal oxide semiconductor channel layer, and the top electrode, and a gate electrode formed within the gate dielectric layer and having a top surface that is coplanar with a top surface of the top electrode. Each top electrode or each bottom electrode of the at least one selector device may be contacted by a respective nonvolatile memory element to provide a one-selector one-resistor memory cell.