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For the Inventor, By the Inventor

Hsinchu, Taiwan

Hsien-Cheng Wang

This inventor holds 41 USPTO granted patents and 3 published patent applications, primarily in Semiconductor Fabrication. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2011-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsien-Cheng Wang. Retrieved from https://idiyas.com/inventor/hsien-cheng-wang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 41 

% Patents Active = 75.6

Average Co-Inventor Count = 4.7

ph-index = 4

Forward Citations = 101(Granted Patents)


Company Filing History:

goldMedal41 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2011-2023

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Areas of Expertise:
Trench Formation
Alignment Marks
Integrated Circuit Structure
Semiconductor Device
Photoresist Materials
Mask Structure
Self-Aligned Contact
Lithography Process
Contact Structure
Overlay Marks
Silicide Process
Carbon Insulation Layer
41 patents (USPTO):Explore Patents
1. 11682579 - Method of forming trenches with different depths (2023-06-20),
2. 11348830 - Method of forming trenches with different depths (2022-05-31),
3. 11244832 - Semiconductor structure with mask structure (2022-02-08),
4. 11121128 - Structure and method for alignment marks (2021-09-14),
5. 10861740 - Method of forming trenches with different depths (2020-12-08),
6. 10790197 - Semiconductor arrangement and formation thereof (2020-09-29),
7. 10727068 - Method for manufacturing semiconductor structure with mask structure (2020-07-28),
8. 10665585 - Structure and method for alignment marks (2020-05-26),
9. 10510614 - Semiconductor arrangement and formation thereof (2019-12-17),
10. 10468257 - Mechanisms for semiconductor device structure (2019-11-05),
11. 10283403 - Method of forming trenches with different depths (2019-05-07),
12. 10276448 - Semiconductor arrangement and formation thereof (2019-04-30),
13. 10276437 - Contact structure of gate structure (2019-04-30),
14. 10163738 - Structure and method for overlay marks (2018-12-25),
15. 10163703 - Method for forming self-aligned contact (2018-12-25),

Title: The Innovative Journey of Hsien-Cheng Wang

Introduction:

Hsien-Cheng Wang is a pioneering inventor hailing from Hsinchu, Taiwan. His groundbreaking work in the field of technology has earned him recognition worldwide.

Latest Patents:

Hsien-Cheng Wang holds several patents in the areas of semiconductor technology and renewable energy solutions. His innovative ideas continue to shape the future of these industries.

Career Highlights:

With a career spanning over two decades, Hsien-Cheng Wang has worked with leading tech companies to develop cutting-edge products. His expertise in research and development has led to significant advancements in the field.

Collaborations:

Throughout his career, Hsien-Cheng Wang has collaborated with top researchers, engineers, and scientists to bring his inventions to life. His ability to work in multidisciplinary teams has been instrumental in his success.

Conclusion:

In conclusion, Hsien-Cheng Wang's dedication to innovation and his passion for creating impactful solutions have solidified his position as a prominent figure in the world of technology. His contributions continue to inspire future generations of inventors and innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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