The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2019
Filed:
Aug. 18, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Hsin-Ying Lin, Tainan, TW;
Mei-Yun Wang, Chu-Pei, TW;
Hsien-Cheng Wang, Hsinchu, TW;
Fu-Kai Yang, Hsinchu, TW;
Shih-Wen Liu, Taoyuan County, TW;
Audrey Hsiao-Chiu Hsu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsin-Chu, TW;
Abstract
Semiconductor device structures and methods for forming the same are provided. The method for forming a semiconductor device structure includes forming a dummy gate structure over a substrate and forming a dielectric layer over the substrate around the dummy gate structure. The method for forming a semiconductor device structure further includes removing the dummy gate structure and removing a portion of the dielectric layer to form a funnel shaped trench. The method for forming a semiconductor device structure further includes forming a gate structure in a bottom portion of the funnel shaped trench and filling a hard mask material in a top portion of the funnel shaped trench to form a funnel shaped hard mask structure.