The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 08, 2022

Filed:

Jul. 27, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Hsin-Ying Lin, Tainan, TW;

Mei-Yun Wang, Chu-Pei, TW;

Hsien-Cheng Wang, Hsinchu, TW;

Fu-Kai Yang, Hsinchu, TW;

Shih-Wen Liu, Taoyuan County, TW;

Hsiao-Chiu Hsu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/40 (2006.01); H01L 21/033 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28123 (2013.01); H01L 21/0334 (2013.01); H01L 21/76805 (2013.01); H01L 21/76897 (2013.01); H01L 29/402 (2013.01); H01L 29/42376 (2013.01); H01L 29/4983 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01); H01L 29/6659 (2013.01); H01L 29/66545 (2013.01);
Abstract

Semiconductor structures are provided. The semiconductor structure includes a substrate and a metal gate structure formed over the substrate. The semiconductor structure further includes a sealing layer comprising an inner sidewall and an outermost sidewall. In addition, the inner sidewall is in direct contact with the metal gate structure and the outermost sidewall is away from the metal gate structure. The semiconductor structure further includes a mask structure formed over the metal gate structure. In addition, the mask structure has a straight sidewall over the metal gate structure and a sloped sidewall extending from the inner sidewall of the sealing layer and passing over the outmost sidewall of the sealing layer.


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