The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
Oct. 08, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Hsin-Ying Lin, Tainan, TW;
Mei-Yun Wang, Chu-Pei, TW;
Hsien-Cheng Wang, Hsinchu, TW;
Fu-Kai Yang, Hsinchu, TW;
Shih-Wen Liu, Taoyuan County, TW;
Hsiao-Chiu Hsu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
Semiconductor structures and methods for forming the same are provided. The method includes forming a dummy gate structure and forming a spacer on a lower portion of a sidewall of the dummy gate structure and exposing an upper portion of the sidewall of the dummy gate structure. The method further includes forming a dielectric layer covering the upper portion of the sidewall of the dummy gate structure exposed by the spacer and removing the dummy gate structure to form a tube-shaped trench. The method further includes removing a portion of the dielectric layer to form a cone-shaped trench and forming a gate structure in a bottom portion of the tube-shaped trench. The method further includes forming a hard mask structure in the cone-shaped trench and an upper portion of the tube-shaped trench, and an interface between the hard mask structure and the dielectric layer overlaps the spacer.