Hsichang Liu

This inventor holds 18 USPTO granted patents, primarily in Thermal Interface Materials. Top assignee: International Business Machines Corporation. Active years: 1999-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsichang Liu. Retrieved from https://idiyas.com/inventor/hsichang-liu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 18

% Patents Active = 27.8

Average Co-Inventor Count = 6.3

ph-index = 3

Forward Citations = 102(Granted Patents)

Location History:

Hopewell Junction, NY (US) (2012 - 2013)
Fishkill, NY (US) (1999 - 2014)

Company Filing History:

18 out of 166,409

International Business Machines Corporation

patents

Years Active: 1999-2014

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Areas of Expertise:

Grain Fragmentation

Thermal Interface

Multilayer Ceramic

Nickel Alloy

Micro-bumps

Partial Wafer Bonding

Rework Method

Conductive Line Features

Intermetallic Diffusion

18 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8910853 - Additives for grain fragmentation in Pb-free Sn-based solder (2014-12-16),

2. 8493746 - Additives for grain fragmentation in Pb-free Sn-based solder (2013-07-23),

3. 8232636 - Reliability enhancement of metal thermal interface (2012-07-31),

4. 8156990 - Apparatus for providing uniaxial load distribution for laminate layers of multilayer ceramic chip carriers (2012-04-17),

5. 7947143 - Method for providing uniaxial load distribution for laminate layers of multilayer ceramic chip carriers (2011-05-24),

6. 7836935 - Apparatus for providing uniaxial load distribution for laminate layers of multilayer ceramic chip carriers (2010-11-23),

7. 7683493 - Intermetallic diffusion block device and method of manufacture (2010-03-23),

8. 7472650 - Nickel alloy plated structure (2009-01-06),

9. 7369410 - Apparatuses for dissipating heat from semiconductor devices (2008-05-06),

10. 7302757 - Micro-bumps to enhance LGA interconnections (2007-12-04),

11. 7287468 - Nickel alloy plated structure (2007-10-30),

12. 7078320 - Partial wafer bonding and dicing (2006-07-18),

13. 6838009 - Rework method for finishing metallurgy on chip carriers (2005-01-04),

14. 6662718 - Screening mask having a stress-relieving area (2003-12-16),

15. 6348233 - Method of forming conductive line features for enhanced reliability of multi-layer ceramic substrates (2002-02-19),

Title: Hsichang Liu: Innovator in Solder Technology

Introduction

Hsichang Liu is a prominent inventor based in Fishkill, NY (US), known for his significant contributions to solder technology. With a total of 18 patents to his name, Liu has made remarkable advancements in the field, particularly in the development of additives for grain fragmentation in lead-free solder.

Latest Patents

One of Liu's latest patents focuses on additives for grain fragmentation in Pb-free Sn-based solder. In this invention, inert nano-sized particles ranging from 1 nm to 1,000 nm are incorporated into solder balls. These particles may consist of metal oxides, metal nitrides, metal carbides, or metal borides. The invention also includes the addition of elemental metals that form stable high melting intermetallic compounds with tin, which create fine particles dispersed within the solder.

Career Highlights

Hsichang Liu is associated with the International Business Machines Corporation (IBM), where he has been instrumental in advancing solder technology. His work has not only contributed to the efficiency of solder materials but has also enhanced the reliability of electronic components.

Collaborations

Liu has collaborated with notable coworkers such as Harry David Cox and Krystyna Waleria Semkow, further enriching his research and development efforts in the field of solder technology.

Conclusion

Hsichang Liu's innovative work in solder technology, particularly with his recent patents, showcases his dedication to improving electronic materials. His contributions continue to influence the industry and pave the way for future advancements.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]