The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2010

Filed:

Apr. 29, 2008
Applicants:

Charles L. Arvin, Poughkeepsie, NY (US);

Carla A. Bailey, Poughkeepsie, NY (US);

Harry D. Cox, Rifton, NY (US);

Hua Gan, Plainsboro, NJ (US);

Hsichang Liu, Fishkill, NY (US);

Arthur G. Merryman, Hopewell Junction, NY (US);

Vall F. Mcclean, Poughkeepsie, NY (US);

Srinivasa S. N. Reddy, Lagrangeville, NY (US);

Brian R. Sundlof, Verbank, NY (US);

Inventors:

Charles L. Arvin, Poughkeepsie, NY (US);

Carla A. Bailey, Poughkeepsie, NY (US);

Harry D. Cox, Rifton, NY (US);

Hua Gan, Plainsboro, NJ (US);

Hsichang Liu, Fishkill, NY (US);

Arthur G. Merryman, Hopewell Junction, NY (US);

Vall F. McClean, Poughkeepsie, NY (US);

Srinivasa S. N. Reddy, Lagrangeville, NY (US);

Brian R. Sundlof, Verbank, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01);
U.S. Cl.
CPC ...
Abstract

One embodiment of the present invention is directed to an under bump metallurgy material. The under bump metallurgy material of this embodiment includes an adhesion layer and a conduction layer formed on top of the adhesion layer. The under bump metallurgy material of this embodiment also includes a barrier layer plated on top of the conduction layer and a sacrificial layer plated on top of the barrier layer. The conduction layer of this embodiment includes a trench formed therein, the trench contacting a portion of the barrier layer and blocking a path of intermetallic formation between the conduction layer and the sacrificial layer.


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