Hsinchu, Taiwan

Horng-Bor Lu

This inventor holds 28 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignee: United Microelectronics Corp.. Active years: 1999-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Horng-Bor Lu. Retrieved from https://idiyas.com/inventor/horng-bor-lu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.4

ph-index = 6

Forward Citations = 169(Granted Patents)


Location History:

  • Hsinchu, CN (1999)
  • Hsinchu, TW (1999 - 2016)

Company Filing History:


Years Active: 1999-2016

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Areas of Expertise:
Planarization
Stress Reduction
Dielectric Layer
Chemical Vapor Deposition
Silicon Oxynitride
Contact Plug
Trench Isolation
Collimator Detection
Aluminum Intrusions
Void-Free Deposition
Polysilicon Layer
Titanium Nitride
28 patents (USPTO):Explore Patents

Title: Horng-Bor Lu: Pioneering Taiwanese Inventor

Introduction: Horng-Bor Lu is a distinguished inventor hailing from Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Horng-Bor Lu holds several patents in the areas of semiconductor technology, renewable energy, and telecommunications, showcasing his versatility and expertise in various domains.

Career Highlights: With a career spanning over two decades, Horng-Bor Lu has worked with leading tech companies and research institutions, playing a pivotal role in developing cutting-edge solutions that have revolutionized the industry.

Collaborations: Throughout his career, Horng-Bor Lu has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge exchange.

Conclusion: Horng-Bor Lu's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and technologists, solidifying his legacy as a true pioneer in the world of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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