The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2000
Filed:
Sep. 30, 1997
Applicant:
Inventors:
Chi-Rong Lin, Chang Hua Hsien, TW;
Horng-Bor Lu, Hsinchu, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438627 ; 438637 ; 438643 ; 438644 ; 438648 ; 438653 ; 438654 ; 438656 ; 438680 ; 438685 ; 438785 ;
Abstract
A method for reducing the stress on a titanium nitride layer formed by collimator sputtering. On a semiconductor substrate, an insulated oxide layer is formed. A trench is formed in the insulated oxide layer. On the trench, a first titanium nitride layer is formed conformally by using physical or chemical vapor deposition as a buffer layer. A second titanium nitride layer is formed by collimator sputtering on the first titanium layer. The orientation of lattice arrangement of the second titanium nitride layers is changed from <100>-orientation to <111>-orientation, and therefore, the stress is reduced.