The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2001
Filed:
Jul. 13, 1999
Applicant:
Inventors:
I. T. Chen, Taipie, TW;
Horng-Bor Lu, Hsinchu, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/131 ;
U.S. Cl.
CPC ...
H01L 2/131 ;
Abstract
A deposition process for forming a void-free dielectric layer is described. A first dielectric layer,is formed over a conductor pattern,A second dielectric layer,is formed to conform to the first dielectric layer. A third dielectric layer,is formed to cover the second dielectric layer. The first, second, and third dielectric layers can be formed by high density plasma deposition, atmospheric pressure deposition, and plasma enhanced deposition, respectively. The second dielectric layer can alternatively be formed by plasma enhanced deposition.