The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
Dec. 15, 1998
Kun-Lin Wu, Taichung, TW;
Horng-Bor Lu, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for fabricating a shallow trench isolation in a semiconductor substrate. A mask layer is formed on the substrate. The mask layer is patterned and used as a mask in order to form a trench in the substrate. A portion of the substrate is removed to form the trench in the substrate. A liner layer is formed on the substrate exposed by the trench and optionally, an additonal liner layer is formed on the liner layer. A doped isolation layer is formed to fill the trench. A densification step is performed. The mask layer is removed. The doped isolation layer has a lower glass transition temperature so that the temperature of the densification step is reduced to about 700° C. to 1000° C.