The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2003
Filed:
Jun. 13, 2002
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
Structures for reducing relative stress between HDP layer and passivation layer are proposed by the invention, where the HDP layer is formed by high density plasma and the passivation layer is a conventional passivation layer. The invention provides some structures that can be divided into two categories: one, a low stress passivation layer is directly formed on a HDP layer; another, a low stress layer is formed between passivation layer and HDP layer to reduce relative layer that between any two adjacent layers. Therefore, it is crystal-clear that possible structures of the invention comprise following varieties: First, a low stress passivation layer is located between a passivation layer and a HDP layer. Second, a lower stress passivation layer directly locates on a HDP layer. Third, a low stress layer is formed between a passivation layer and a HDP layer.